Description

Features

• Voltage Supply : 2.7V ~ 5.5V
• Organization
  
    -Memory Cell Array : (4M + 128K)bit x 8bit
  
    -Data Register: (512 + 16)bit x8bit
• Automatic Program and Erase
  
    -Page Program : (512 + 16)Byte
  
    -Block Erase : (8K + 256)Byte
  
    -Status Register
• 528-Byte Page Read Operation
  
    -Random Access: 10us(Max.)
  
    -Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
  
    -Program time : 250us(Typ.)
  
    -Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O port
• Hardware Data Protection
  
    – Program/Erase Lockout During Power Transitions