Description

Features

• HIGH DENSITY NAND FLASH MEMORIE
  
    -Cost effective solutions for mass storage applications
• NAND INTERFACE
  
    -x8 or x16 bus width.
  
    -Multiplexed Address/ Data
  
    -Pinout compatibility for all densities
• SUPPLY VOLTAGE
  
    -3.3V device: VCC = 2.7 to 3.6V : HY27USXX561A
  
    -1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561A
• Memory Cell Array
  
    -(512+16) Bytes x 32 Pages x 2,048 Blocks
  
    -(256+8) Words x 32 pages x 2,048 Blocks
• PAGE SIZE
  
    -x8 device:(512 + 16 spare) Bytes: HY27(U/S)S08561A
  
    -x16 device: (256 + 8 spare) Words: HY27(U/S)S16561A
• BLOCK SIZE
  
    -x8 device:(16K + 512 spare) Bytes
  
    -x16 device: (8K + 256 spare) Words
• PAGE READ / PROGRA
  
    -Random access: 3.3V: 12us (max.)1.8V: 15us (max.)
  
    -Sequential access: 3.3V: 50ns (min.) 1.8V: 60ns (min.
  
    -Page program time: 200us (typ.)